Silicon carbide deposition furnace

Silicon Carbide Deposition Furnace is a method by introducing precursor substances (usually organic compounds or metal organic compounds) in the reaction gas into the reaction chamber, and causing them to thermally decompose or chemically react at high temperatures to form The reaction product is deposited onto the substrate to form a thin film. This method can be used to prepare industrial furnaces for heating materials such as metals, alloys, semiconductors and ceramics.

Industrial Electric Furnaces are widely used in the following industries and product manufacturing:

Civil aviation carbon brake disc

Carbon-carbon thermal field materials for single crystal silicon growth furnace

Carbon-carbon thermal field materials for polycrystalline silicon hydrogenation furnaces

Carbon-carbon thermal field materials for polycrystalline silicon ingot furnaces and PECVD furnaces

Carbon-carbon high temperature structural materials

Carbon-carbon high temperature structural parts

Carbon-carbon-silicon carbide composites

Carbon/carbon pile collapse, collapse state

Carbon guide tube

Carbon guide tube

Carbon/carbon plate, insulation cylinder

Carbon/carbon plate, insulation cylinder

Carbon/carbon crucible

Carbon/carbon crucible

Cvd Chemical Vapor Deposition Furnace product parameters

1. Model: YHGYL-CJL**/**-** (customized size specifications)
2. Heating method: isostatic graphite resistance heating
3. Power control: low DC voltage, high current mode
4. The design power is 200KW, and the actual production power is not more than 150KW.
5. Power supply: three-phase five-wire system, three-phase 380V, frequency 50HZ
6. Design temperature: 2100℃, long-term common temperature is 2000℃;
7. Cooling method: natural cooling
8. Effective material placement space: customized by customer
9. Heating rate: When loading, the average heating rate below 1000℃ is 5℃/min, the average heating rate between 1000-1800℃ is 5℃/min, and the average heating rate between 1800-2250℃ is 3℃/min.
10. Temperature control accuracy: RT room temperature -2000℃≤±5℃
11. Power supply configuration: integrated with furnace body
12. Furnace body type: horizontal front door discharging
13. Working gas content in the furnace: vacuum or Ar, N2, NH₃ and other gases (slight positive pressure), vacuum replacement; (automatic constant pressure control in the range of 100-7500pa)
14. Temperature uniformity: ≤±3℃ (evaluated after 30 minutes of constant temperature);
15. Temperature measurement: multi-zone tungsten sleeve tungsten-rhenium thermocouple temperature measurement
16. Temperature control: Japan Shimaden FP23, PID intelligent temperature controller program control (temperature control accuracy: ±0.1℃) and manual control;
17. Protection method: PLC+touch screen+sound and light alarm
18. Vacuum system configuration: 2H-150 slide valve pump
19. Vacuum measurement: resistance + capacitance film vacuum gauge, measuring range 0-10-5 pa
20. Pressure rise rate: Evacuate to 5Pa, stop the pump for 30 minutes and start timing, pressure rise per hour ≤ 10P
21. Cold ultimate vacuum degree: ≤5Pa (in clean, cold, empty furnace state)
22. Empty furnace vacuuming time ≤30min (empty furnace, room temperature, refer to GB/T10066.1-2004 for testing.)
23. Maximum pressure in the furnace 0.02Mpa
24. Mass flow meter: Beijing Qixing Huachuang
25. Cooling system: All circulating water pipes are well sealed and there is no leakage during use;
26. Electrical control: Siemens PLC + Delta 15-inch touch screen. Key parameters such as vacuum, temperature, and power can be queried in real time and historically, and can be exported through a USB flash drive and set up a paperless recorder.
27. Imported materials are used for key components, such as temperature control instruments and thermometers.
28. Opening method: manual
29. Material entry and exit method: equipped with special entry and exit trucks
30. Paint color: main body milky white, frame sky blue, base black

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